H5AN8G8NAFR-UHCR vs H5AN8G8NAFR-VKC Vergleich
Detaillierter Direktvergleich von H5AN8G8NAFR-UHCR von SK hynix und H5AN8G8NAFR-VKC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G8NAFR-UHCR | H5AN8G8NAFR-VKC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,20 | $4,15 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Speicherorganisation | 1G x 8 | 1G x 8 |
| Datenrate | 2400 Mbps/pin (PC2400) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Schnittstelle | CMOS, synchronous DDR4 | SSTL12 |
| Gehäuse | FBGA-78 (PBGA78) | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Packing Suffix | R = Tape & Reel | — |
| Speed Grade Code | -UH | — |
| Generation Family | H5AN8GxNAFR-xxC (DDR4) | — |
| RoHS-Status | Compliant (Lead-Free & Halogen-Free) | Compliant (Lead-Free & Halogen-Free) |
| Application Class | Main memory / high bandwidth | — |
| CAS-Latenz | [DATA_NEEDED: CAS latency (CL)] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | [DATA_NEEDED: refresh specification] | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Speed Grade | — | DDR4-2666 (VKC bin) |
| Burst Length | — | 8 (BL8) |
| Bank Group Architecture | — | Supported (per DDR4 JEDEC architecture) |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes (DLL for output skew control) |
| Process Technology | — | CMOS |
| Recommended Application | — | Main memory requiring large density and high bandwidth |