H5AN8G8NAFR-UHCR vs H5AN8G8NAFR-VKC Comparación
Comparación detallada lado a lado de H5AN8G8NAFR-UHCR por SK hynix y H5AN8G8NAFR-VKC por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5AN8G8NAFR-UHCR | H5AN8G8NAFR-VKC |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,20 | $4,15 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organización de memoria | 1G x 8 | 1G x 8 |
| Velocidad de datos | 2400 Mbps/pin (PC2400) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Interfaz | CMOS, synchronous DDR4 | SSTL12 |
| Encapsulado | FBGA-78 (PBGA78) | 78-ball FBGA |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packing Suffix | R = Tape & Reel | — |
| Speed Grade Code | -UH | — |
| Generation Family | H5AN8GxNAFR-xxC (DDR4) | — |
| Estado RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant (Lead-Free & Halogen-Free) |
| Application Class | Main memory / high bandwidth | — |
| Latencia CAS | [DATA_NEEDED: CAS latency (CL)] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | [DATA_NEEDED: refresh specification] | — |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Speed Grade | — | DDR4-2666 (VKC bin) |
| Burst Length | — | 8 (BL8) |
| Bank Group Architecture | — | Supported (per DDR4 JEDEC architecture) |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes (DLL for output skew control) |
| Process Technology | — | CMOS |
| Recommended Application | — | Main memory requiring large density and high bandwidth |