H5AN8G8NCJR-VKC vs K4A8G085WC-BCWE Vergleich
Detaillierter Direktvergleich von H5AN8G8NCJR-VKC von SK hynix und K4A8G085WC-BCWE von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G8NCJR-VKC | K4A8G085WC-BCWE |
|---|---|---|
| Marke | SK hynix | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $28,13 | $7,38 |
| Speichertyp | DDR4 SDRAM (volatile) | DDR4 SDRAM |
| Speichergröße | 8 Gbit | — |
| Memory Organization | 1G x 8 | — |
| Datenrate | 2666 Mbps/pin | 3200 Mbps (DDR4-3200) |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (1.2 V class) | — |
| Operating Current (typ) | 30 mA | — |
| Standby Current (typ) | 3 mA | — |
| Betriebstemperatur | 0C to +85C | 0C to +85C |
| Gehäuse | FBGA-78 (78-ball fine-pitch BGA) | 78FBGA |
| Montageart | Surface Mount | Surface Mount |
| Schnittstelle | Parallel (DDR4) | DDR4 (parallel, double data rate) |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| RoHS-Status | Compliant | Compliant (per JLCPCB listing) |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh period] | — |
| Density | — | 8 Gb |
| Speicherorganisation | — | 1G x 8 |
| Versorgungsspannung | — | 1.2 V |
| Application Class | — | Computing / Embedded main memory |
| Manufacturer | — | Samsung Electronics |
| Bank Group Architecture | — | DDR4 bank groups (8n prefetch) |
| Speed Bin Suffix | — | -BCWE (DDR4-3200, commercial temp) |
| Refresh | — | Standard DDR4 refresh mechanisms |
| On-Die Termination | — | Yes (DDR4 ODT) |