H5AN8G8NCJR-VKC vs K4A8G085WC-BCWE 对比
详细并排对比 H5AN8G8NCJR-VKC 出自 SK hynix 和 K4A8G085WC-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G8NCJR-VKC | K4A8G085WC-BCWE |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $28.13 | $7.38 |
| 存储器类型 | DDR4 SDRAM (volatile) | DDR4 SDRAM |
| 存储容量 | 8 Gbit | — |
| Memory Organization | 1G x 8 | — |
| 数据速率 | 2666 Mbps/pin | 3200 Mbps (DDR4-3200) |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (1.2 V class) | — |
| Operating Current (typ) | 30 mA | — |
| Standby Current (typ) | 3 mA | — |
| 工作温度 | 0C to +85C | 0C to +85C |
| 封装 | FBGA-78 (78-ball fine-pitch BGA) | 78FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | Parallel (DDR4) | DDR4 (parallel, double data rate) |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| RoHS 状态 | Compliant | Compliant (per JLCPCB listing) |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh period] | — |
| Density | — | 8 Gb |
| 存储组织 | — | 1G x 8 |
| 电源电压 | — | 1.2 V |
| Application Class | — | Computing / Embedded main memory |
| Manufacturer | — | Samsung Electronics |
| Bank Group Architecture | — | DDR4 bank groups (8n prefetch) |
| Speed Bin Suffix | — | -BCWE (DDR4-3200, commercial temp) |
| Refresh | — | Standard DDR4 refresh mechanisms |
| On-Die Termination | — | Yes (DDR4 ODT) |