H5AN8G8NCJR-XNC vs H5AN8G8NDJR Vergleich
Detaillierter Direktvergleich von H5AN8G8NCJR-XNC von SK hynix und H5AN8G8NDJR von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G8NCJR-XNC | H5AN8G8NDJR |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $30,69 | $24,50 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Speichergröße | 8 Gbit | — |
| Speicherorganisation | 1 Gb x 8 | 1G x 8 |
| Datenrate | 3200 Mbps (DDR4-3200) | 3200 MT/s |
| Clock Frequency | 1.6 GHz | — |
| Versorgungsspannung | 1.14 V to 1.26 V (1.2 V nominal) | — |
| Gehäuse | 78-ball FBGA, 7.5 mm x 11 mm | FBGA-78 (7.5x11 mm) |
| Betriebstemperatur | 0 C to +85 C | 0°C to +95°C (Tc) |
| Montageart | Surface Mount | — |
| Schnittstelle | DDR4 (8-bit data interface) | — |
| Architecture | Bank-group based DDR4 | — |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge | — |
| On-Chip Termination | Dynamic ODT | — |
| Calibration | ZQ calibration, write leveling | — |
| Error Handling | CRC function | — |
| Reset | Asynchronous reset | — |
| Data Mask | Data mask function | — |
| Current - Operating | 39 mA | — |
| Current - Standby | 30 mA | — |
| RoHS-Status | Compliant | — |
| Lead-Free / Halogen-Free | Yes | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VDDQ | — | 1.2 V |
| VPP | — | 2.5 V |
| CAS-Latenz | — | 22 (typical) |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Burst Length | — | 8 and 4 (with burst chop) |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |