H5AN8G8NCJR-XNC vs H5AN8G8NDJR Comparison
Detailed side-by-side comparison of H5AN8G8NCJR-XNC by SK hynix and H5AN8G8NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G8NCJR-XNC | H5AN8G8NDJR |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $30.69 | $24.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | — |
| Organization | 1 Gb x 8 | 1G x 8 |
| Data Rate | 3200 Mbps (DDR4-3200) | 3200 MT/s |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage | 1.14 V to 1.26 V (1.2 V nominal) | — |
| Package | 78-ball FBGA, 7.5 mm x 11 mm | FBGA-78 (7.5x11 mm) |
| Operating Temperature | 0 C to +85 C | 0°C to +95°C (Tc) |
| Mounting Type | Surface Mount | — |
| Interface | DDR4 (8-bit data interface) | — |
| Architecture | Bank-group based DDR4 | — |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge | — |
| On-Chip Termination | Dynamic ODT | — |
| Calibration | ZQ calibration, write leveling | — |
| Error Handling | CRC function | — |
| Reset | Asynchronous reset | — |
| Data Mask | Data mask function | — |
| Current - Operating | 39 mA | — |
| Current - Standby | 30 mA | — |
| RoHS Status | Compliant | — |
| Lead-Free / Halogen-Free | Yes | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| VDDQ | — | 1.2 V |
| VPP | — | 2.5 V |
| CAS Latency | — | 22 (typical) |
| tRCD | — | 22 ns |
| tRP | — | 22 ns |
| Burst Length | — | 8 and 4 (with burst chop) |
| Self-Refresh Current | — | 30 mA (typical) |
| Active Standby Current | — | 60 mA (typical) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |