H5AN8G8NDJR vs H5AN8G8NCJR-XNC Vergleich
Detaillierter Direktvergleich von H5AN8G8NDJR von SK hynix und H5AN8G8NCJR-XNC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN8G8NDJR | H5AN8G8NCJR-XNC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $24,50 | $30,69 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Speicherorganisation | 1G x 8 | 1 Gb x 8 |
| Datenrate | 3200 MT/s | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | — |
| VDDQ | 1.2 V | — |
| VPP | 2.5 V | — |
| Betriebstemperatur | 0°C to +95°C (Tc) | 0 C to +85 C |
| Gehäuse | FBGA-78 (7.5x11 mm) | 78-ball FBGA, 7.5 mm x 11 mm |
| CAS-Latenz | 22 (typical) | — |
| tRCD | 22 ns | — |
| tRP | 22 ns | — |
| Burst Length | 8 and 4 (with burst chop) | — |
| Self-Refresh Current | 30 mA (typical) | — |
| Active Standby Current | 60 mA (typical) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Speichergröße | — | 8 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Versorgungsspannung | — | 1.14 V to 1.26 V (1.2 V nominal) |
| Montageart | — | Surface Mount |
| Schnittstelle | — | DDR4 (8-bit data interface) |
| Architecture | — | Bank-group based DDR4 |
| Refresh | — | Auto self-refresh |
| Precharge | — | Auto precharge |
| On-Chip Termination | — | Dynamic ODT |
| Calibration | — | ZQ calibration, write leveling |
| Error Handling | — | CRC function |
| Reset | — | Asynchronous reset |
| Data Mask | — | Data mask function |
| Current - Operating | — | 39 mA |
| Current - Standby | — | 30 mA |
| RoHS-Status | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes |