H5AN8G8NDJR vs H5AN8G8NCJR-XNC Comparison
Detailed side-by-side comparison of H5AN8G8NDJR by SK hynix and H5AN8G8NCJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5AN8G8NCJR-XNC
H5AN8G8NCJR-XNC - 8Gb DDR4-3200 SDRAM, x8, FBGA-78 | SK hynix
H5AN8G8NCJR-XNC β ActiveSpecification Comparison
| Parameter | H5AN8G8NDJR | H5AN8G8NCJR-XNC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $24.50 | $10.77 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 1G x 8 | 1 Gb x 8 |
| Data Rate | 3200 MT/s | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | β |
| VDDQ | 1.2 V | β |
| VPP | 2.5 V | β |
| Operating Temperature | 0Β°C to +95Β°C (Tc) | 0 C to +85 C |
| Package | FBGA-78 (7.5x11 mm) | 78-ball FBGA, 7.5 mm x 11 mm |
| CAS Latency | 22 (typical) | β |
| tRCD | 22 ns | β |
| tRP | 22 ns | β |
| Burst Length | 8 and 4 (with burst chop) | β |
| Self-Refresh Current | 30 mA (typical) | β |
| Active Standby Current | 60 mA (typical) | β |
| RoHS | Compliant | β |
| Lead-Free | Yes | β |
| Memory Size | β | 8 Gbit |
| Clock Frequency | β | 1.6 GHz |
| Supply Voltage | β | 1.14 V to 1.26 V (1.2 V nominal) |
| Mounting Type | β | Surface Mount |
| Interface | β | DDR4 (8-bit data interface) |
| Architecture | β | Bank-group based DDR4 |
| Refresh | β | Auto self-refresh |
| Precharge | β | Auto precharge |
| On-Chip Termination | β | Dynamic ODT |
| Calibration | β | ZQ calibration, write leveling |
| Error Handling | β | CRC function |
| Reset | β | Asynchronous reset |
| Data Mask | β | Data mask function |
| Current - Operating | β | 39 mA |
| Current - Standby | β | 30 mA |
| RoHS Status | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes |