H5ANAG6NBJR-VKC vs H5ANAG6NBJR-UHC Vergleich
Detaillierter Direktvergleich von H5ANAG6NBJR-VKC von SK hynix und H5ANAG6NBJR-UHC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG6NBJR-VKC | H5ANAG6NBJR-UHC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $15,00 | $8,09 |
| Manufacturer | SK Hynix | — |
| Part Number | H5ANAG6NBJR-VKC | — |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 16Gb (2GB) | — |
| Speicherorganisation | [DATA_NEEDED: x16 organization per datasheet] | 256M x 16 |
| Datenrate | 2666 Mbps (per family reference, VKC speed code) | — |
| Versorgungsspannung | 1.2 V (DDR4 standard) | — |
| Schnittstelle | DDR4, SSTL-12 | DDR4 (CMOS) |
| Gehäuse | FBGA-96 (PBGA96) | PBGA96 / FBGA-96 (TFBGA) |
| Montageart | Surface Mount | — |
| Betriebstemperatur | -40C to +95C (family grade reference) | -40C to +95C |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Asynchronous Reset | Yes | Supported |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | Supported |
| Write Leveling | Yes | Supported |
| CRC Function | Yes | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | RoHS Compliant |
| Density | — | 4 Gb |
| Package Dimensions | — | 13 mm length (per JESD-30 R-PBGA-B96) |
| Access Mode | — | Multi Bank, Page Burst |
| Refresh | — | Auto / Self Refresh |
| Data Mask | — | Supported (DM function) |
| On-Chip Termination | — | Dynamic ODT |
| CRC | — | Supported |
| Supply Voltage Class | — | DDR4 (1.2 V class) |
| REACH Compliance | — | Compliant |
| ECCN | — | EAR99 |
| HTS Code | — | 8542.32.00.36 |
| CAS-Latenz | — | [DATA_NEEDED: CAS Latency] |
| Max Data Rate | — | [DATA_NEEDED: Max Data Rate] |