H5ANAG6NCJR-XN vs H5ANAG6NCR-UHC Vergleich
Detaillierter Direktvergleich von H5ANAG6NCJR-XN von SK hynix und H5ANAG6NCR-UHC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG6NCJR-XN | H5ANAG6NCR-UHC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Mobile LPDDR4 |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $71,20 | $9,20 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit (1G x 16) | — |
| Speicherorganisation | 1G x 16 | 1G x 16 |
| Datenrate | 3200 Mbps/pin (DDR4-3200) | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | [DATA_NEEDED: VDD voltage] |
| Gehäuse | FBGA-96 (96-ball) | FBGA-96 (PBGA-96) |
| Package Width | 8 mm | — |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC (Command/Address) | Yes | — |
| Write Leveling | Yes | — |
| Maximum Standby Current | 0.074 A (per Vyrian listing) | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating temperature range] |
| CAS-Latenz | [DATA_NEEDED: CAS latency for -XN speed grade] | — |
| Memory Density | — | 16 Gb (2 GB) |
| Schnittstelle | — | CMOS, Double Data Rate IV |
| Die Revision | — | C |
| Speed Grade | — | [DATA_NEEDED: Speed grade / data rate] |
| Configuration | — | 1 Channel, 1 Rank |
| Refresh | — | [DATA_NEEDED: Refresh scheme] |
| Factory Packing Quantity | — | [DATA_NEEDED: Standard packing quantity] |
| Application | — | Main memory, embedded computing, industrial controllers |