H5ANAG6NCR-VKC vs H5ANAG6NCJR-XN Vergleich
Detaillierter Direktvergleich von H5ANAG6NCR-VKC von SK hynix und H5ANAG6NCJR-XN von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG6NCR-VKC | H5ANAG6NCJR-XN |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $71,20 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 16 Gbit | — |
| Speicherorganisation | 2G x 8 | 1G x 16 |
| Schnittstelle | DDR4 (Double Data Rate 4) | — |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Datenrate | [DATA_NEEDED: verified speed grade in Mbps] | 3200 Mbps/pin (DDR4-3200) |
| Gehäuse | 96-ball FBGA | FBGA-96 (96-ball) |
| Montageart | Surface Mount | Surface Mount (BGA) |
| Banks | 16 banks (4 bank groups x 4) | — |
| Burst Length | BL8 | — |
| Refresh Mode | 1x / 2x / 4X per JEDEC DDR4 | — |
| Betriebstemperatur | [DATA_NEEDED: temperature suffix range confirmation] | [DATA_NEEDED: operating temperature range] |
| Technology | CMOS | — |
| Application | Main memory (PC / server / embedded) | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance statement] | Compliant |
| Density | — | 16 Gbit (1G x 16) |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Package Width | — | 8 mm |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask (DM) | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC (Command/Address) | — | Yes |
| Write Leveling | — | Yes |
| Maximum Standby Current | — | 0.074 A (per Vyrian listing) |
| CAS-Latenz | — | [DATA_NEEDED: CAS latency for -XN speed grade] |