H5ANAG8NCMR-VKC - 16Gb DDR4-2666 x8 DRAM FBGA | SK hynix
Teilenummer: H5ANAG8NCMR-VKC ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $11.5 | $11,50 |
| 10 | $10.35 | $103,50 |
| 100 | $9.2 | $920,00 |
| 500 | $8.6 | $4.300,00 |
| 1.000 | $8.05 | $8.050,00 |
H5ANAG8NCMR-VKC Übersicht
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random access memory. Within the memory hierarchy, DRAM sits between CPU caches and storage, serving as main system memory. DDR4 improved on DDR3 by lowering the operating voltage from 1.5V to 1.2V, raising bank groups to four (16 banks total per device), and increasing prefetch efficiency through bank-group interleaving, which raises effective bandwidth at the same core frequency.
Key features of the H5ANAG8NCMR-VKC include the 16Gb single-die density (2G x 8 organization), the VK speed bin supporting DDR4-2666 operation, and the standard 1.2V VDD supply with 1.2V VDDQ for I/O. The x8 organization simplifies DIMM and downboard designs and supports write CRC and command/address parity features defined by the JEDEC DDR4 interface. The device is manufactured on SK hynix CMOS DRAM process technology and is intended for normal-power operation.
Architecturally, the 16Gb die is divided into four bank groups of four banks each, enabling back-to-back data bursts within a bank group under tCCD_S/tCCD_L timing control. On-die termination (ODT), data mask (DM), and multi-purpose programmable registers support signal integrity tuning on high-speed buses.
Typical applications include server and workstation DIMMs, embedded computing modules, industrial controllers, networking equipment, and consumer and mobile computing systems where large memory density per component is required.
When designing in this device, follow the DDR4 routing rules for length-matched fly-by command/address topology and verify the VK speed-bin AC timings against the SK hynix datasheet for your controller settings.
This page synthesizes distributor stock data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für H5ANAG8NCMR-VKC – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit H5ANAG8NCMR-VKC (gleiche Bauform und Footprint) – abweichend in Package, Data Rate, Interface, RoHS Status, Mounting Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
H5ANAG8NCJR-XNC
✅ Drop-In✓ Auf Lager
$65.625 / Stück
Datenblatt ansehen →H5ANAG8NAMR-UHC
✅ Drop-In✓ Auf Lager
$2.15 / Stück
Datenblatt ansehen →H5ANAG8NBJR-VKC
✅ Drop-In✓ Auf Lager
$8.6 / Stück
Datenblatt ansehen →MT40A2G8AG-062E
✅ Drop-In✓ Auf Lager
$9.75 / Stück
Datenblatt ansehen →K4AAG085WM-BCWE
✅ Drop-In✓ Auf Lager
$7 / Stück
Datenblatt ansehen →K4AAG165WM-BCRC
✅ Drop-In✓ Auf Lager
$22.6 / Stück
Datenblatt ansehen →H5ANAG8NCMR-VKC Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR4 SDRAM |
| Speichergröße | 16 Gb |
| Memory Organization | 2G x 8 |
| Datenrate | 2666 Mbps/pin (DDR4-2666) |
| Supply Voltage (VDD) | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V |
| Gehäuse | FBGA-78 |
| Montageart | Surface Mount |
| Speed Grade | VK (per SK hynix speed-bin suffix) |
| Power Class | Normal Power |
| Bank Groups | 4 |
| Banks Total | 16 |
| Manufacturer Process | CMOS DRAM |
H5ANAG8NCMR-VKC fbga-78 Pinbelegungsleitfaden
Pinbelegung für H5ANAG8NCMR-VKC (fbga-78-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für H5ANAG8NCMR-VKC.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
H5ANAG8NCMR-VKC ist geeignet für 6 Anwendungs: Server and Workstation Main Memory, Embedded Computing Modules, Industrial Controllers and Automation, Networking and Telecom Equipment, Consumer Electronics and Smart Displays, Test and Measurement Instruments.
Server and Workstation Main Memory
The H5ANAG8NCMR-VKC's 16Gb density and 2G x 8 organization make it a building block for registered and load-reduced server DIMMs, where 18-36 components per module deliver capacities up to 288 GB per RDIMM. Its DDR4-2666 VK speed bin supplies 2666 Mbps per pin, and the four-bank-group architecture enables back-to-back bursts that sustain high bus utilization in multi-rank configurations. Placed on a fly-by command/address topology with on-die termination, the device maintains signal integrity at 2666 Mbps across the module. The 1.2V operation reduces per-DIMM power compared with DDR3 solutions, lowering data-center cooling overhead. Memory-controller training and write-CRC support ensure reliability in error-correcting server environments.
Empfohlen
Embedded Computing Modules
COM Express, SMARC, and other embedded computing modules commonly downboard 16Gb DDR4 components such as the H5ANAG8NCMR-VKC directly around a system-on-chip to reach 4-8 GB of soldered memory without SO-DIMM sockets. The 2G x 8 organization pairs naturally with 32-bit or 64-bit memory controllers, and the DDR4-2666 rate matches the upper speed range of embedded x86 and ARM SoC memory interfaces. The 1.2V rail simplifies power-tree design in 5V or 12V input systems. Soldered-down FBGA components also improve vibration tolerance versus socketed DIMMs, a key requirement in transportation and industrial edge computing. Verify SoC memory-training support for the SK hynix die revision before production.
Empfohlen
Industrial Controllers and Automation
Industrial PLCs, machine-vision controllers, and motion-control platforms use the H5ANAG8NCMR-VKC to buffer frame data, recipe storage caches, and real-time logging buffers. The 16Gb density allows large in-memory histories without external storage traffic, and the x8 organization supports ECC implementations for long-uptime reliability. At 1.2V and normal power class, the component contributes minimally to cabinet thermal load. DDR4's command/address parity improves bus robustness in electrically noisy factory environments. Designers should confirm the commercial temperature rating fits the enclosure ambient, or select an industrial-qualified suffix if the deployment exceeds 0C to 85C conditions, and use conformal-coating-compatible BGA underfill where condensation is a risk.
Empfohlen
Networking and Telecom Equipment
Routers, switches, and 5G baseband units require deep packet buffers and fast table lookups; the H5ANAG8NCMR-VKC supplies 16Gb per component at DDR4-2666, providing over 2.1 GB/s of theoretical peak bandwidth per 64-bit device pair at minimal controller latency. The four bank groups allow interleaved buffer management across queues, and write CRC protects packet data on high-load backplanes. The 1.2V supply suits thermally constrained line-card designs where many memory components populate a single board. The 78-ball FBGA footprint allows dense placement with controlled-impedance length matching to the network processor. Second-source options from Micron and Samsung reduce supply risk for long-lifecycle telecom programs.
Empfohlen
Consumer Electronics and Smart Displays
Smart TVs, set-top boxes, gaming peripherals, and digital-media adapters integrate the H5ANAG8NCMR-VKC for frame buffering and application memory. The 16Gb single-component capacity supports 4K video frame buffers plus operating-system working sets in a compact 78-ball FBGA footprint, reducing PCB area versus multi-8Gb layouts. DDR4-2666 bandwidth handles multiple concurrent decode streams at 4K60, and 1.2V operation meets consumer standby-power targets. The x8 organization allows flexible 32-bit or 64-bit bus configurations with mainstream SoCs. Designers should pair the device with the SoC's validated memory-training table and confirm the VK bin is within the SoC's supported DDR4 frequency range before release.
Empfohlen
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and spectrum analyzers require deep acquisition memory to capture long records at high sample rates; the H5ANAG8NCMR-VKC's 16Gb density per component enables multi-gigasample capture depths when organized across 64-bit or 128-bit wide front-end buses. The DDR4-2666 rate supports the sustained write bandwidth needed to stream ADC data into memory, and bank-group interleaving smooths burst write efficiency from acquisition ASICs. The 1.2V operation limits power density inside enclosed instrument chassis. The 78-ball FBGA permits routing on high-layer-count acquisition boards with matched-length fly-by topologies. Qualify second sources such as the Micron MT40A2G8AG-062E to de-risk long instrument production cycles.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für H5ANAG8NCMR-VKC – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | H5ANAG8NCJR-XNC | H5ANAG8NAMR-UHC | H5ANAG8NBJR-VKC | MT40A2G8AG-062E | K4AAG085WM-BCWE |
|---|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same (JEDEC x8 ballout) | FBGA-78 - same (JEDEC x8 ballout) |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | Micron Technology | Samsung Electronics |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Data Rate | 2666 Mbps (DDR4-2666, VK bin) | Higher XN bin (>2666 Mbps) | 2400 Mbps (UH bin) | 2666 Mbps (VK bin) | 2666 Mbps (062E bin) | 2666 Mbps class (BCW bin) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Organization Compatibility | x8 (DQS, DM per byte lane) | x8 - same | x8 - same | x8 - same | x8 - same | x16 - different DQ/DQS mapping |
| Typical Role | Main memory, 2666 class | Headroom designs, faster bin | Cost/derated 2400 designs | Second source for shortage mitigation | Second source, broad DIMM adoption |
Wichtigste Unterscheidungsmerkmale
- DDR4-2666 VK speed bin at standard 1.2V (vs. H5ANAG8NAMR-UHC)
- Dual cross-brand drop-in sourcing (vs. MT40A2G8AG-062E)
- 16Gb single-component density (vs. H5AN8G8NCJR-VKC)
Designhinweise
At DDR4-2666 the command/address bus requires fly-by routing with per-DIMM/per-device ODT calibration, and DQ/DQS length matching within the JEDEC DDR4 skew budget. Keep DQS-DQ intra-byte skew minimized and reference continuous ground planes on high-layer-count boards. Use the memory controller's write leveling and read training to compensate for PCB skew with the SK hynix VK bin timings from the current datasheet revision.
The H5ANAG8NCMR-VKC uses 1.2V VDD and VDDQ rails; each rail needs bulk capacitance sized for simultaneous switching of all 8 DQ balls plus burst currents, typically implemented with multiple 10uF plus dense 0.1uF decoupling around the FBGA. Estimated: a 64-bit bus of eight devices switching at 2666 Mbps can draw multi-amp transient currents, so plan rail impedance and power-plane allocation accordingly rather than relying on datasheet IDD alone.
Do not mix speed bins across ranks without verifying controller support, and always re-run memory training when second-sourcing (e.g., substituting MT40A2G8AG-062E for this part), since vendor-specific mode register defaults and ZQ calibration behavior can differ. Also confirm the temperature rating of the purchased suffix; SK hynix notes specifications may change without notice, so lock the datasheet revision in your quality system.
Compliance-Informationen
Compliance status not stated in the provided web data; request RoHS/REACH declarations from SK hynix or your distributor.