IAUA180N04S5N012AUMA1 vs IAUCN04S7N019GATMA1 Vergleich
Detaillierter Direktvergleich von IAUA180N04S5N012AUMA1 von Infineon und IAUCN04S7N019GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon
IAUA180N04S5N012AUMA1 ✓ AktivInfineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUA180N04S5N012AUMA1 | IAUCN04S7N019GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,96 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUA180N04S5N012AUMA1 | — |
| Series | OptiMOS-5 40 V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 180 A (Tc) | — |
| Maximum Power Dissipation (PD) | 125 W (Tc) | — |
| R_DS(on) (max) | 1.2 mΩ at 10 V VGS | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gehäuse | PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm² | PG-THSOG-4-1 (SSO4G 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +175 °C (Tj) | [DATA_NEEDED: junction temperature range from datasheet] |
| Technology | OptiMOS-5 Trench | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per family datasheet) |
| RoHS-Status | Compliant | Compliant |
| Product Family | — | OptiMOS 7 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tj) | — | 147 A |
| On-Resistance RDS(on) typical | — | 1.95 mOhm |
| Maximum Power Dissipation (Tc) | — | 81 W |
| Substrate Compatibility | — | IMS substrates and legacy PCB |
| Lead-Free | — | Yes |
| Tape and Reel Packaging | — | Yes (per ATMA1 suffix) |