IAUA180N04S5N012AUMA1 vs IAUCN04S7N019GATMA1 对比

详细并排对比 IAUA180N04S5N012AUMA1 出自 Infineon 和 IAUCN04S7N019GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUA180N04S5N012AUMA1 IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 ✓ 量产中

规格对比

参数 IAUA180N04S5N012AUMA1 IAUCN04S7N019GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.96 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUA180N04S5N012AUMA1 —
Series OptiMOS-5 40 V —
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) 180 A (Tc) —
Maximum Power Dissipation (PD) 125 W (Tc) —
R_DS(on) (max) 1.2 mΩ at 10 V VGS —
Gate-Source Voltage (VGS) max ±20 V —
封装 PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm² PG-THSOG-4-1 (SSO4G 5x6 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 °C to +175 °C (Tj) [DATA_NEEDED: junction temperature range from datasheet]
Technology OptiMOS-5 Trench —
Automotive Qualification AEC-Q101 AEC-Q101 (per family datasheet)
RoHS 状态 Compliant Compliant
Product Family — OptiMOS 7
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)

数据手册与资源

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