IAUC41N06S5N102ATMA1 vs IAUCN04S7N037GATMA1 Vergleich

Detaillierter Direktvergleich von IAUC41N06S5N102ATMA1 von Infineon und IAUCN04S7N037GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IAUC41N06S5N102ATMA1 IAUCN04S7N037GATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,58 $0,89
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 Power-Transistor —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID, Tc) 47 A (Tj) —
Power Dissipation (PD, Tc=25C) 42 W —
On-Resistance (RDS(on)) 10.2 mΩ at VGS=10 V, ID=20 A —
Gate-Source Threshold (VGS(th)) 3.4 V (typical) —
Total Gate Charge (QG) 12.5 nC —
Gehäuse PG-TDSON-8-33 (SSO8) Surface Mount SSO4G 5x6 mm² (PG-THSOG-4-1)
Betriebstemperaturbereich -55C to +175C (junction) [DATA_NEEDED: junction/ambient temperature limits]
Montageart Surface Mount Surface Mount (IMS substrate attach compatible)
Automotive Qualification AEC-Q101 (per Infineon automotive MOSFET family) AEC-Q101
RoHS-Status Compliant Compliant
Channel Polarity N-Channel (single) —
Series — OptiMOS 7
Technology — Trench MOSFET, N-Channel
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
MSL-Level — [DATA_NEEDED: MSL level]
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

Datenblätter & Ressourcen

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