IAUC41N06S5N102ATMA1 vs IAUCN04S7N037GATMA1 Comparison

Detailed side-by-side comparison of IAUC41N06S5N102ATMA1 by Infineon and IAUCN04S7N037GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N037GATMA1 IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 ✓ Active

Specification Comparison

Parameter IAUC41N06S5N102ATMA1 IAUCN04S7N037GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 Power-Transistor —
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID, Tc) 47 A (Tj) —
Power Dissipation (PD, Tc=25C) 42 W —
On-Resistance (RDS(on)) 10.2 mΩ at VGS=10 V, ID=20 A —
Gate-Source Threshold (VGS(th)) 3.4 V (typical) —
Total Gate Charge (QG) 12.5 nC —
Package PG-TDSON-8-33 (SSO8) Surface Mount SSO4G 5x6 mm² (PG-THSOG-4-1)
Operating Temperature Range -55C to +175C (junction) [DATA_NEEDED: junction/ambient temperature limits]
Mounting Type Surface Mount Surface Mount (IMS substrate attach compatible)
Automotive Qualification AEC-Q101 (per Infineon automotive MOSFET family) AEC-Q101
RoHS Status Compliant Compliant
Channel Polarity N-Channel (single) —
Series — OptiMOS 7
Technology — Trench MOSFET, N-Channel
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
MSL Level — [DATA_NEEDED: MSL level]
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

Datasheets & Resources

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