IAUC41N06S5N102ATMA1 vs IAUCN04S7N037GATMA1 Comparison
Detailed side-by-side comparison of IAUC41N06S5N102ATMA1 by Infineon and IAUCN04S7N037GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC41N06S5N102ATMA1
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΞ© OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 β ActiveInfineon
IAUCN04S7N037GATMA1
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 β ActiveSpecification Comparison
| Parameter | IAUC41N06S5N102ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Power-Transistor | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID, Tc) | 47 A (Tj) | β |
| Power Dissipation (PD, Tc=25C) | 42 W | β |
| On-Resistance (RDS(on)) | 10.2 mΞ© at VGS=10 V, ID=20 A | β |
| Gate-Source Threshold (VGS(th)) | 3.4 V (typical) | β |
| Total Gate Charge (QG) | 12.5 nC | β |
| Package | PG-TDSON-8-33 (SSO8) Surface Mount | SSO4G 5x6 mmΒ² (PG-THSOG-4-1) |
| Operating Temperature Range | -55C to +175C (junction) | [DATA_NEEDED: junction/ambient temperature limits] |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Automotive Qualification | AEC-Q101 (per Infineon automotive MOSFET family) | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| Channel Polarity | N-Channel (single) | β |
| Series | β | OptiMOS 7 |
| Technology | β | Trench MOSFET, N-Channel |
| Continuous Drain Current (ID) at Tj | β | 91 A |
| On-State Resistance RDS(on) typical | β | 3.65 mΞ© at VGS = 10 V |
| Power Dissipation (PD) at Tc | β | 57 W |
| Channel Type | β | N-Channel |
| Operating Mode | β | Enhancement |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| Gate Charge (Qg) typical | β | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |