IAUC60N10S5L110ATMA1 vs IAUC120N06S5N022ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC60N10S5L110ATMA1 von Infineon und IAUC120N06S5N022ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N022ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC60N10S5L110ATMA1 | IAUC120N06S5N022ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,66 | $1,68 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™-5 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | — |
| Gehäuse | PG-TDSON-8-33 (TDSON-8 Single) | PG-TDSON-8-34 (TDSON EP 5x6) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: min/max operating temperature] | [DATA_NEEDED: TJ min/max] |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | — |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | — |
| Packing Code | ATMA1 (Tape & Reel) | — |
| MSL-Level | 1 (per LCSC datasheet snippet) | — |
| Halogenfrei | Yes (per Infineon product classification) | Yes (per Infineon product family convention) |
| Customer Info / FGR | J52 (per Infineon product data) | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) | — | 170 A (Tj) |
| On-Resistance RDS(on) max | — | 2.2 mΩ at VGS=10 V |
| Power Dissipation (PD) | — | 136 W (Tc) |
| Technology | — | OptiMOS-5 trench |
| Channel Type | — | N-Channel |
| Pin-Anzahl | — | 8 (with exposed pad) |
| Automotive Qualification | — | AEC-Q101 |
| RoHS-Status | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) @4.5V] |