IAUC60N10S5L110ATMA1 vs IAUC120N06S5N022ATMA1 Сравнение
Подробное сравнение бок о бок IAUC60N10S5L110ATMA1 от Infineon и IAUC120N06S5N022ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N022ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUC60N10S5L110ATMA1 | IAUC120N06S5N022ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,66 | $1,68 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™-5 | — |
| Тип транзистора | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | — |
| Корпус | PG-TDSON-8-33 (TDSON-8 Single) | PG-TDSON-8-34 (TDSON EP 5x6) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | [DATA_NEEDED: min/max operating temperature] | [DATA_NEEDED: TJ min/max] |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | — |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | — |
| Packing Code | ATMA1 (Tape & Reel) | — |
| Уровень MSL | 1 (per LCSC datasheet snippet) | — |
| Без галогенов | Yes (per Infineon product classification) | Yes (per Infineon product family convention) |
| Customer Info / FGR | J52 (per Infineon product data) | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) | — | 170 A (Tj) |
| On-Resistance RDS(on) max | — | 2.2 mΩ at VGS=10 V |
| Power Dissipation (PD) | — | 136 W (Tc) |
| Technology | — | OptiMOS-5 trench |
| Channel Type | — | N-Channel |
| Число выводов | — | 8 (with exposed pad) |
| Automotive Qualification | — | AEC-Q101 |
| Статус RoHS | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) @4.5V] |