IAUC60N10S5L110ATMA1 vs IAUC120N06S5N022ATMA1 Comparison

Detailed side-by-side comparison of IAUC60N10S5L110ATMA1 by Infineon and IAUC120N06S5N022ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC60N10S5L110ATMA1

IAUC60N10S5L110ATMA1 - 100V 11mΞ© N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 βœ“ Active
Infineon
IAUC120N06S5N022ATMA1

IAUC120N06S5N022ATMA1 - 60V, 2.2mΞ© OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N022ATMA1 βœ“ Active

Specification Comparison

Parameter IAUC60N10S5L110ATMA1 IAUC120N06S5N022ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $1.68
Manufacturer Infineon Technologies β€”
Series OptiMOSβ„’-5 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (V<sub>DS</sub>) 100 V β€”
Continuous Drain Current (I<sub>D</sub>, Tc) 60 A β€”
Power Dissipation (P<sub>D</sub>, Tc) 88 W β€”
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V 11 mΞ© β€”
Gate Threshold Voltage (V<sub>GS(th)</sub>) 1.2 V β€”
Package PG-TDSON-8-33 (TDSON-8 Single) PG-TDSON-8-34 (TDSON EP 5x6)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: min/max operating temperature] [DATA_NEEDED: TJ min/max]
Gate-Source Voltage (V<sub>GS</sub>) Max [DATA_NEEDED: VGS max rating] β€”
Total Gate Charge (Q<sub>G</sub>) [DATA_NEEDED: Qg at specified Vgs] β€”
Avalanche Energy (E<sub>AS</sub>) [DATA_NEEDED: single-pulse avalanche energy] β€”
Lead-Free / RoHS Yes (RoHS compliant per LCSC listing) β€”
Packing Code ATMA1 (Tape & Reel) β€”
MSL Level 1 (per LCSC datasheet snippet) β€”
Halogen-Free Yes (per Infineon product classification) Yes (per Infineon product family convention)
Customer Info / FGR J52 (per Infineon product data) β€”
Drain-Source Voltage (VDS) β€” 60 V
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) β€” 170 A (Tj)
On-Resistance RDS(on) max β€” 2.2 mΞ© at VGS=10 V
Power Dissipation (PD) β€” 136 W (Tc)
Technology β€” OptiMOS-5 trench
Channel Type β€” N-Channel
Pin Count β€” 8 (with exposed pad)
Automotive Qualification β€” AEC-Q101
RoHS Status β€” Compliant
Total Gate Charge (Qg) β€” [DATA_NEEDED: typical Qg]
RDS(on) at VGS=4.5V β€” [DATA_NEEDED: RDS(on) @4.5V]

Datasheets & Resources

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