IAUC60N10S5L110ATMA1 vs IAUC120N06S5N022ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC60N10S5L110ATMA1 par Infineon et IAUC120N06S5N022ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N022ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC60N10S5L110ATMA1 | IAUC120N06S5N022ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,66 | $1,68 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™-5 | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | — |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | — |
| Boîtier | PG-TDSON-8-33 (TDSON-8 Single) | PG-TDSON-8-34 (TDSON EP 5x6) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | [DATA_NEEDED: min/max operating temperature] | [DATA_NEEDED: TJ min/max] |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | — |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | — |
| Packing Code | ATMA1 (Tape & Reel) | — |
| Niveau MSL | 1 (per LCSC datasheet snippet) | — |
| Sans halogène | Yes (per Infineon product classification) | Yes (per Infineon product family convention) |
| Customer Info / FGR | J52 (per Infineon product data) | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) | — | 170 A (Tj) |
| On-Resistance RDS(on) max | — | 2.2 mΩ at VGS=10 V |
| Power Dissipation (PD) | — | 136 W (Tc) |
| Technology | — | OptiMOS-5 trench |
| Channel Type | — | N-Channel |
| Nombre de broches | — | 8 (with exposed pad) |
| Automotive Qualification | — | AEC-Q101 |
| Statut RoHS | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) @4.5V] |