IAUCN04S7L009ATMA1 vs IAUCN04S7N037GATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7L009ATMA1 von Infineon und IAUCN04S7N037GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S7L009ATMA1 - 40V 275A 0.91mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L009ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN04S7L009ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,96 | $0,89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUCN04S7L009ATMA1 | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS™ 7 (trench-gate) | Trench MOSFET, N-Channel |
| Drain-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id, Tc=25°C) | 275 A (Tj) | — |
| Continuous Drain Current (Id, Tc=100°C) | 175 A | — |
| Power Dissipation (Pd, Tc=25°C) | 129 W | — |
| Rds(on) Max @ Vgs=10V | 0.91 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Gehäuse | PG-TDSON-8-34 (TDSON EP) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Montageart | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Betriebstemperaturbereich | -55 °C to +175 °C (Tj) | [DATA_NEEDED: junction/ambient temperature limits] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| MSL-Level | 1 | [DATA_NEEDED: MSL level] |
| RoHS-Status | Compliant | Compliant |
| Series | — | OptiMOS 7 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |