IAUCN04S7L009ATMA1 vs IAUCN04S7N037GATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7L009ATMA1 por Infineon y IAUCN04S7N037GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7L009ATMA1 - 40V 275A 0.91mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L009ATMA1 ✓ ActivoInfineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7L009ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,96 | $0,89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUCN04S7L009ATMA1 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS™ 7 (trench-gate) | Trench MOSFET, N-Channel |
| Drain-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id, Tc=25°C) | 275 A (Tj) | — |
| Continuous Drain Current (Id, Tc=100°C) | 175 A | — |
| Power Dissipation (Pd, Tc=25°C) | 129 W | — |
| Rds(on) Max @ Vgs=10V | 0.91 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Encapsulado | PG-TDSON-8-34 (TDSON EP) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Tipo de montaje | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (Tj) | [DATA_NEEDED: junction/ambient temperature limits] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Nivel MSL | 1 | [DATA_NEEDED: MSL level] |
| Estado RoHS | Compliant | Compliant |
| Series | — | OptiMOS 7 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |