IAUCN04S7L009ATMA1 vs IAUCN04S7N037GATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L009ATMA1 by Infineon and IAUCN04S7N037GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L009ATMA1
IAUCN04S7L009ATMA1 - 40V 275A 0.91mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L009ATMA1 β ActiveInfineon
IAUCN04S7N037GATMA1
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7L009ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.96 | $0.89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUCN04S7L009ATMA1 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOSβ’ 7 (trench-gate) | Trench MOSFET, N-Channel |
| Drain-Source Voltage (Vdss) | 40 V | β |
| Continuous Drain Current (Id, Tc=25Β°C) | 275 A (Tj) | β |
| Continuous Drain Current (Id, Tc=100Β°C) | 175 A | β |
| Power Dissipation (Pd, Tc=25Β°C) | 129 W | β |
| Rds(on) Max @ Vgs=10V | 0.91 mΞ© | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | β |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Package | PG-TDSON-8-34 (TDSON EP) | SSO4G 5x6 mmΒ² (PG-THSOG-4-1) |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Operating Temperature Range | -55 Β°C to +175 Β°C (Tj) | [DATA_NEEDED: junction/ambient temperature limits] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Series | β | OptiMOS 7 |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Tj | β | 91 A |
| On-State Resistance RDS(on) typical | β | 3.65 mΞ© at VGS = 10 V |
| Power Dissipation (PD) at Tc | β | 57 W |
| Channel Type | β | N-Channel |
| Operating Mode | β | Enhancement |
| Gate Charge (Qg) typical | β | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |