IAUCN04S7N009ATMA1 vs IAUCN04S7L006ATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7N009ATMA1 von Infineon und IAUCN04S7L006ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUCN04S7N009ATMA1 | IAUCN04S7L006ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,55 | $1,38 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS-7 trench |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | 175 A |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| Gehäuse | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-43 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant | Compliant |
| Configuration | Single N-Channel | — |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| R_DS(on) Max | — | 0.6 mΩ at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical value] |
| Gate Charge (Q_g) | — | [DATA_NEEDED: total gate charge] |
| Betriebstemperaturbereich | — | -55 °C to +175 °C |
| Automotive Qualified | — | Yes (AEC-Q101) |
| Pin-Anzahl | — | 8 |
| Packaging | — | Tape and Reel (ATMA1) |
| Polarity | — | Single N-Channel |