IAUCN04S7N009ATMA1 vs IAUCN04S7L006ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N009ATMA1 by Infineon and IAUCN04S7L006ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IAUCN04S7N009ATMA1 | IAUCN04S7L006ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS-7 trench |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | 175 A |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| Package | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-43 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| MSL Level | 1 | — |
| RoHS Status | Compliant | Compliant |
| Configuration | Single N-Channel | — |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| R_DS(on) Max | — | 0.6 mΩ at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical value] |
| Gate Charge (Q_g) | — | [DATA_NEEDED: total gate charge] |
| Operating Temperature Range | — | -55 °C to +175 °C |
| Automotive Qualified | — | Yes (AEC-Q101) |
| Pin Count | — | 8 |
| Packaging | — | Tape and Reel (ATMA1) |
| Polarity | — | Single N-Channel |