IAUCN04S7N009ATMA1 vs IAUCN04S7L006ATMA1 对比
详细并排对比 IAUCN04S7N009ATMA1 出自 Infineon 和 IAUCN04S7L006ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN04S7N009ATMA1 | IAUCN04S7L006ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.55 | $1.38 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS-7 trench |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | 175 A |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| 封装 | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-43 |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| MSL 等级 | 1 | — |
| RoHS 状态 | Compliant | Compliant |
| Configuration | Single N-Channel | — |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| R_DS(on) Max | — | 0.6 mΩ at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical value] |
| Gate Charge (Q_g) | — | [DATA_NEEDED: total gate charge] |
| 工作温度范围 | — | -55 °C to +175 °C |
| Automotive Qualified | — | Yes (AEC-Q101) |
| 引脚数量 | — | 8 |
| Packaging | — | Tape and Reel (ATMA1) |
| Polarity | — | Single N-Channel |