IAUCN04S7N009ATMA1 vs ISC046N13NM6ATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7N009ATMA1 von Infineon und ISC046N13NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IAUCN04S7N009ATMA1 | ISC046N13NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,55 | $1,08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 6 trench MOSFET |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| Gehäuse | PG-TDSON-8-34 (Surface Mount) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant | Compliant |
| Configuration | Single N-Channel | — |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Part Family | — | OptiMOS 6 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 135 V |
| Continuous Drain Current (ID) at TA | — | 17 A |
| Continuous Drain Current (ID) at TC | — | 142 A |
| Power Dissipation (PD) at TA | — | 3 W |
| Power Dissipation (PD) at TC | — | 211 W |
| Gehäuse / Bauform | — | PG-TDSON-8 |
| Betriebstemperaturbereich | — | -55 C to +175 C |
| Gate Drive (recommended) | — | 10 V (typical) |
| Packaging | — | Tape & Reel |