IAUCN04S7N009ATMA1 vs ISC046N13NM6ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N009ATMA1 by Infineon and ISC046N13NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N009ATMA1

IAUCN04S7N009ATMA1 - 40V 0.96mΞ© 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 βœ“ Active
Infineon
ISC046N13NM6ATMA1

ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon

ISC046N13NM6ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N009ATMA1 ISC046N13NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $1.08
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) OptiMOS 6 trench MOSFET
Drain-to-Source Voltage (V_DSS) 40 V β€”
Continuous Drain Current (I_D) 175 A β€”
R_DS(on) Max @ V_GS = 10 V 0.96 mΞ© β€”
Gate Drive Voltage (V_GS) 10 V β€”
Package PG-TDSON-8-34 (Surface Mount) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C β€”
Qualification AEC-Q101 (Automotive) β€”
MSL Level 1 β€”
RoHS Status Compliant Compliant
Configuration Single N-Channel β€”
Supplier Device Package PG-TDSON-8-34 β€”
Part Family β€” OptiMOS 6
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 135 V
Continuous Drain Current (ID) at TA β€” 17 A
Continuous Drain Current (ID) at TC β€” 142 A
Power Dissipation (PD) at TA β€” 3 W
Power Dissipation (PD) at TC β€” 211 W
Package / Case β€” PG-TDSON-8
Operating Temperature Range β€” -55 C to +175 C
Gate Drive (recommended) β€” 10 V (typical)
Packaging β€” Tape & Reel

Datasheets & Resources

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