IAUCN04S7N009ATMA1 vs ISC046N13NM6ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N009ATMA1 by Infineon and ISC046N13NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IAUCN04S7N009ATMA1 | ISC046N13NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 6 trench MOSFET |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| Package | PG-TDSON-8-34 (Surface Mount) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| MSL Level | 1 | — |
| RoHS Status | Compliant | Compliant |
| Configuration | Single N-Channel | — |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Part Family | — | OptiMOS 6 |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 135 V |
| Continuous Drain Current (ID) at TA | — | 17 A |
| Continuous Drain Current (ID) at TC | — | 142 A |
| Power Dissipation (PD) at TA | — | 3 W |
| Power Dissipation (PD) at TC | — | 211 W |
| Package / Case | — | PG-TDSON-8 |
| Operating Temperature Range | — | -55 C to +175 C |
| Gate Drive (recommended) | — | 10 V (typical) |
| Packaging | — | Tape & Reel |