IAUCN04S7N009ATMA1 vs ISC046N13NM6ATMA1 对比
详细并排对比 IAUCN04S7N009ATMA1 出自 Infineon 和 ISC046N13NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN04S7N009ATMA1 | ISC046N13NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.55 | $1.08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 6 trench MOSFET |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| 封装 | PG-TDSON-8-34 (Surface Mount) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| MSL 等级 | 1 | — |
| RoHS 状态 | Compliant | Compliant |
| Configuration | Single N-Channel | — |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Part Family | — | OptiMOS 6 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 135 V |
| Continuous Drain Current (ID) at TA | — | 17 A |
| Continuous Drain Current (ID) at TC | — | 142 A |
| Power Dissipation (PD) at TA | — | 3 W |
| Power Dissipation (PD) at TC | — | 211 W |
| 封装 / 外壳 | — | PG-TDSON-8 |
| 工作温度范围 | — | -55 C to +175 C |
| Gate Drive (recommended) | — | 10 V (typical) |
| Packaging | — | Tape & Reel |