IAUCN04S7N019GATMA1 vs IAUCN04S7L042GATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN04S7N019GATMA1 von Infineon und IAUCN04S7L042GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ AktivInfineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN04S7N019GATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,82 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 7 40V |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tj) | 147 A | 77 A |
| On-Resistance RDS(on) typical | 1.95 mOhm | — |
| Maximum Power Dissipation (Tc) | 81 W | — |
| Gehäuse | PG-THSOG-4-1 (SSO4G 5x6 mm) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Montageart | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Substrate Compatibility | IMS substrates and legacy PCB | — |
| Automotive Qualification | AEC-Q101 (per family datasheet) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Tape and Reel Packaging | Yes (per ATMA1 suffix) | — |
| Betriebstemperaturbereich | [DATA_NEEDED: junction temperature range from datasheet] | -55C to +175C (Tj) |
| Technology | — | Trench N-Channel MOSFET |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| MSL-Level | — | 1 |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |