IAUCN04S7N019GATMA1 vs IAUCN04S7L042GATMA1 对比

详细并排对比 IAUCN04S7N019GATMA1 出自 Infineon 和 IAUCN04S7L042GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IAUCN04S7N019GATMA1 IAUCN04S7L042GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 7 40V
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tj) 147 A 77 A
On-Resistance RDS(on) typical 1.95 mOhm —
Maximum Power Dissipation (Tc) 81 W —
封装 PG-THSOG-4-1 (SSO4G 5x6 mm) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
安装类型 Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Substrate Compatibility IMS substrates and legacy PCB —
Automotive Qualification AEC-Q101 (per family datasheet) —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Tape and Reel Packaging Yes (per ATMA1 suffix) —
工作温度范围 [DATA_NEEDED: junction temperature range from datasheet] -55C to +175C (Tj)
Technology — Trench N-Channel MOSFET
Maximum Power Dissipation (PD, Tc) — 50 W
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
MSL 等级 — 1
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

数据手册与资源

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