IAUCN04S7N019GATMA1 vs IAUCN04S7L042GATMA1 Сравнение
Подробное сравнение бок о бок IAUCN04S7N019GATMA1 от Infineon и IAUCN04S7L042GATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ АктивенInfineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUCN04S7N019GATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,82 | $0,86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | OptiMOS 7 40V |
| Тип транзистора | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tj) | 147 A | 77 A |
| On-Resistance RDS(on) typical | 1.95 mOhm | — |
| Maximum Power Dissipation (Tc) | 81 W | — |
| Корпус | PG-THSOG-4-1 (SSO4G 5x6 mm) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Тип монтажа | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Substrate Compatibility | IMS substrates and legacy PCB | — |
| Automotive Qualification | AEC-Q101 (per family datasheet) | — |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Tape and Reel Packaging | Yes (per ATMA1 suffix) | — |
| Диапазон рабочих температур | [DATA_NEEDED: junction temperature range from datasheet] | -55C to +175C (Tj) |
| Technology | — | Trench N-Channel MOSFET |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Уровень MSL | — | 1 |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |