IAUCN04S7N027GATMA1 vs IAUCN04S7L005ATMA1 Vergleich

Detaillierter Direktvergleich von IAUCN04S7N027GATMA1 von Infineon und IAUCN04S7L005ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IAUCN04S7N027GATMA1 IAUCN04S7L005ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,72 $0,85
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (Vds max) 40 V —
Continuous Drain Current (Id) 117 A —
On-Resistance (Rds(on) max) 2.67 mOhm —
Power Dissipation (Pd) 70 W (Tc) —
Gehäuse / Bauform PG-THSOG-4-1 (SSO4G 5x6) —
Montageart Surface Mount Surface Mount
Qualification Automotive —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] -55°C to +175°C (Tj)
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Gate-Source Voltage Max (Vgs) [DATA_NEEDED: Vgs max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL] [DATA_NEEDED: MSL rating]
Substrate Compatibility IMS substrates and legacy FR-4 —
Technology — OptiMOS 7 (trench N-channel MOSFET)
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, T_C=25°C) — 430 A (Tj)
Continuous Drain Current (I_D, T_C=100°C) — [DATA_NEEDED: I_D at T_C=100°C]
On-Resistance R_DS(on) max — 0.52 mΩ
Power Dissipation (P_D) — 179 W (T_C)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical and min/max]
Total Gate Charge (Q_g) — [DATA_NEEDED: total Q_g in nC]
Gehäuse — PG-TDSON-8-43 (TDSON-8)
Pin-Anzahl — 8
Automotive Qualification — AEC-Q101 qualified
Lead-Free — Yes

Datenblätter & Ressourcen

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