IAUCN04S7N027GATMA1 vs IAUCN04S7L005ATMA1 比較
詳細な並列比較: IAUCN04S7N027GATMA1 メーカー: Infineon および IAUCN04S7L005ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUCN04S7N027GATMA1 | IAUCN04S7L005ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.72 | $0.85 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds max) | 40 V | — |
| Continuous Drain Current (Id) | 117 A | — |
| On-Resistance (Rds(on) max) | 2.67 mOhm | — |
| Power Dissipation (Pd) | 70 W (Tc) | — |
| パッケージ / ケース | PG-THSOG-4-1 (SSO4G 5x6) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Qualification | Automotive | — |
| 動作温度範囲 | [DATA_NEEDED: operating temperature range] | -55°C to +175°C (Tj) |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Gate-Source Voltage Max (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: MSL] | [DATA_NEEDED: MSL rating] |
| Substrate Compatibility | IMS substrates and legacy FR-4 | — |
| Technology | — | OptiMOS 7 (trench N-channel MOSFET) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 430 A (Tj) |
| Continuous Drain Current (I_D, T_C=100°C) | — | [DATA_NEEDED: I_D at T_C=100°C] |
| On-Resistance R_DS(on) max | — | 0.52 mΩ |
| Power Dissipation (P_D) | — | 179 W (T_C) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: total Q_g in nC] |
| パッケージ | — | PG-TDSON-8-43 (TDSON-8) |
| ピン数 | — | 8 |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free | — | Yes |