IAUCN04S7N027GATMA1 vs IAUCN04S7L005ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N027GATMA1 by Infineon and IAUCN04S7L005ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N027GATMA1

IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N027GATMA1 IAUCN04S7L005ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.72 $0.85
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 7 β€”
Channel Type N-Channel β€”
Drain-Source Voltage (Vds max) 40 V β€”
Continuous Drain Current (Id) 117 A β€”
On-Resistance (Rds(on) max) 2.67 mOhm β€”
Power Dissipation (Pd) 70 W (Tc) β€”
Package / Case PG-THSOG-4-1 (SSO4G 5x6) β€”
Mounting Type Surface Mount Surface Mount
Qualification Automotive β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55Β°C to +175Β°C (Tj)
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] β€”
Gate-Source Voltage Max (Vgs) [DATA_NEEDED: Vgs max] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg] β€”
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL] [DATA_NEEDED: MSL rating]
Substrate Compatibility IMS substrates and legacy FR-4 β€”
Technology β€” OptiMOS 7 (trench N-channel MOSFET)
Drain-Source Voltage (V_DS) β€” 40 V
Continuous Drain Current (I_D, T_C=25Β°C) β€” 430 A (Tj)
Continuous Drain Current (I_D, T_C=100Β°C) β€” [DATA_NEEDED: I_D at T_C=100Β°C]
On-Resistance R_DS(on) max β€” 0.52 mΞ©
Power Dissipation (P_D) β€” 179 W (T_C)
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: V_GS(th) typical and min/max]
Total Gate Charge (Q_g) β€” [DATA_NEEDED: total Q_g in nC]
Package β€” PG-TDSON-8-43 (TDSON-8)
Pin Count β€” 8
Automotive Qualification β€” AEC-Q101 qualified
Lead-Free β€” Yes

Datasheets & Resources

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