IAUCN10S7N074ATMA1 vs IAUCN04S7N037GATMA1 Vergleich
Detaillierter Direktvergleich von IAUCN10S7N074ATMA1 von Infineon und IAUCN04S7N037GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUCN10S7N074ATMA1 - 100V 7.4mΩ N-Channel OptiMOS 7 MOSFET | Infineon
IAUCN10S7N074ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUCN10S7N074ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,89 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (Shielded-Gate Trench) | Trench MOSFET, N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 78 A (Tj) | — |
| Power Dissipation (P<sub>D</sub>) | 96 W (Tc) | — |
| R<sub>DS(on)</sub> (typ at V<sub>GS</sub>=10 V) | 7.4 mΩ | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | [DATA_NEEDED: junction/ambient temperature limits] |
| Gehäuse | PG-TDSON-8-34 (TDSON EP, 5x6 mm) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Montageart | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Pin-Anzahl | 8 (with exposed pad) | — |
| MSL-Level | MSL2 (1 year) | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Application | 48 V Automotive Systems | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |