IAUCN10S7N074ATMA1 vs IAUCN04S7N037GATMA1 对比
详细并排对比 IAUCN10S7N074ATMA1 出自 Infineon 和 IAUCN04S7N037GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUCN10S7N074ATMA1 - 100V 7.4mΩ N-Channel OptiMOS 7 MOSFET | Infineon
IAUCN10S7N074ATMA1 ✓ 量产中规格对比
| 参数 | IAUCN10S7N074ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $0.89 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (Shielded-Gate Trench) | Trench MOSFET, N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 78 A (Tj) | — |
| Power Dissipation (P<sub>D</sub>) | 96 W (Tc) | — |
| R<sub>DS(on)</sub> (typ at V<sub>GS</sub>=10 V) | 7.4 mΩ | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| 工作温度范围 | -55 °C to +175 °C | [DATA_NEEDED: junction/ambient temperature limits] |
| 封装 | PG-TDSON-8-34 (TDSON EP, 5x6 mm) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| 安装类型 | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| 引脚数量 | 8 (with exposed pad) | — |
| MSL 等级 | MSL2 (1 year) | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Application | 48 V Automotive Systems | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |