IGI60L1111B1MXUMA1 vs IGI60L1414B1MXUMA1 Vergleich
Detaillierter Direktvergleich von IGI60L1111B1MXUMA1 von Infineon und IGI60L1414B1MXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IGI60L1111B1MXUMA1 | IGI60L1414B1MXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | Transistors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,55 | $4,55 |
| Technology | GaN (Gallium Nitride), enhancement-mode | GaN (Gallium Nitride), enhancement-mode |
| Configuration | Half-Bridge (integrated gate driver + bootstrap diode) | Half-bridge (high-side + low-side switch) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| On-Resistance (RDS(on), typ) | 110 mΩ | — |
| Ausgangsstrom (max.) | 7.4 A | — |
| Gate-Drive Supply (VCC) | 10 V to 20 V | — |
| Gehäuse | PG-TFLGA-27-2 (6 x 8 mm) | PG-TFLGA-27-2 |
| Integrated Bootstrap Diode | Yes | — |
| PWM Input Logic Level | 3.3 V / 5 V compatible | — |
| CoolGaN Generation | G5 | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolGaN™ (IGI family) |
| Continuous Drain Current (ID) | — | 6.0 A |
| On-Resistance (RDS(on)) | — | 140 mΩ (per switch) |
| Gate Driver | — | Integrated (high-side + low-side) |
| Level Shifter | — | Integrated high-voltage level shifter |
| Bootstrap Diode | — | Integrated ultra-fast low-resistance |
| Source Drive Current | — | +0.29 A |
| Sink Drive Current | — | -0.7 A |
| Turn-On/Turn-Off | — | Application-configurable (external Rg) |
| Application Category | — | SMPS, PFC, motor drive, Class-D audio |