IGI60L1111B1MXUMA1 vs IGI60L1414B1MXUMA1 Comparison
Detailed side-by-side comparison of IGI60L1111B1MXUMA1 by Infineon and IGI60L1414B1MXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IGI60L1111B1MXUMA1 | IGI60L1414B1MXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | Transistors |
| Lifecycle Status | Active | Active |
| Technology | GaN (Gallium Nitride), enhancement-mode | GaN (Gallium Nitride), enhancement-mode |
| Configuration | Half-Bridge (integrated gate driver + bootstrap diode) | Half-bridge (high-side + low-side switch) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| On-Resistance (RDS(on), typ) | 110 mΩ | — |
| Output Current (Max) | 7.4 A | — |
| Gate-Drive Supply (VCC) | 10 V to 20 V | — |
| Package | PG-TFLGA-27-2 (6 x 8 mm) | PG-TFLGA-27-2 |
| Integrated Bootstrap Diode | Yes | — |
| PWM Input Logic Level | 3.3 V / 5 V compatible | — |
| CoolGaN Generation | G5 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolGaN™ (IGI family) |
| Continuous Drain Current (ID) | — | 6.0 A |
| On-Resistance (RDS(on)) | — | 140 mΩ (per switch) |
| Gate Driver | — | Integrated (high-side + low-side) |
| Level Shifter | — | Integrated high-voltage level shifter |
| Bootstrap Diode | — | Integrated ultra-fast low-resistance |
| Source Drive Current | — | +0.29 A |
| Sink Drive Current | — | -0.7 A |
| Turn-On/Turn-Off | — | Application-configurable (external Rg) |
| Application Category | — | SMPS, PFC, motor drive, Class-D audio |