IGI60L1111B1MXUMA1 vs IGI60L1414B1MXUMA1 对比

详细并排对比 IGI60L1111B1MXUMA1 出自 Infineon 和 IGI60L1414B1MXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IGI60L1111B1MXUMA1 IGI60L1111B1MXUMA1 - 600V CoolGaN Half-Bridge | Infineon

IGI60L1111B1MXUMA1 - 600V CoolGaN Half-Bridge | Infineon

IGI60L1111B1MXUMA1 ✓ 量产中
Infineon
IGI60L1414B1MXUMA1 IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΩ | Infineon

IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΩ | Infineon

IGI60L1414B1MXUMA1 ✓ 量产中

规格对比

参数 IGI60L1111B1MXUMA1 IGI60L1414B1MXUMA1
品牌 Infineon Infineon
分类 MOSFETs Transistors
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.55 $4.55
Technology GaN (Gallium Nitride), enhancement-mode GaN (Gallium Nitride), enhancement-mode
Configuration Half-Bridge (integrated gate driver + bootstrap diode) Half-bridge (high-side + low-side switch)
Drain-Source Voltage (VDS) 600 V 600 V
On-Resistance (RDS(on), typ) 110 mΩ —
输出电流(最大) 7.4 A —
Gate-Drive Supply (VCC) 10 V to 20 V —
封装 PG-TFLGA-27-2 (6 x 8 mm) PG-TFLGA-27-2
Integrated Bootstrap Diode Yes —
PWM Input Logic Level 3.3 V / 5 V compatible —
CoolGaN Generation G5 —
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
MSL 等级 [DATA_NEEDED: MSL rating] —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Series — CoolGaN™ (IGI family)
Continuous Drain Current (ID) — 6.0 A
On-Resistance (RDS(on)) — 140 mΩ (per switch)
Gate Driver — Integrated (high-side + low-side)
Level Shifter — Integrated high-voltage level shifter
Bootstrap Diode — Integrated ultra-fast low-resistance
Source Drive Current — +0.29 A
Sink Drive Current — -0.7 A
Turn-On/Turn-Off — Application-configurable (external Rg)
Application Category — SMPS, PFC, motor drive, Class-D audio

数据手册与资源

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