IGI60L1111B1MXUMA1 vs IGI60L1414B1MXUMA1 비교

다음의 상세 나란히 비교: IGI60L1111B1MXUMA1 제조: Infineon 및 IGI60L1414B1MXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IGI60L1111B1MXUMA1 IGI60L1111B1MXUMA1 - 600V CoolGaN Half-Bridge | Infineon

IGI60L1111B1MXUMA1 - 600V CoolGaN Half-Bridge | Infineon

IGI60L1111B1MXUMA1 ✓ 활성
Infineon
IGI60L1414B1MXUMA1 IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΩ | Infineon

IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΩ | Infineon

IGI60L1414B1MXUMA1 ✓ 활성

사양 비교

파라미터 IGI60L1111B1MXUMA1 IGI60L1414B1MXUMA1
브랜드 Infineon Infineon
카테고리 MOSFETs Transistors
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $5.55 $4.55
Technology GaN (Gallium Nitride), enhancement-mode GaN (Gallium Nitride), enhancement-mode
Configuration Half-Bridge (integrated gate driver + bootstrap diode) Half-bridge (high-side + low-side switch)
Drain-Source Voltage (VDS) 600 V 600 V
On-Resistance (RDS(on), typ) 110 mΩ —
출력 전류 (최대) 7.4 A —
Gate-Drive Supply (VCC) 10 V to 20 V —
패키지 PG-TFLGA-27-2 (6 x 8 mm) PG-TFLGA-27-2
Integrated Bootstrap Diode Yes —
PWM Input Logic Level 3.3 V / 5 V compatible —
CoolGaN Generation G5 —
실장 유형 Surface Mount Surface Mount
동작 온도 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
MSL 레벨 [DATA_NEEDED: MSL rating] —
RoHS 상태 Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Series — CoolGaN™ (IGI family)
Continuous Drain Current (ID) — 6.0 A
On-Resistance (RDS(on)) — 140 mΩ (per switch)
Gate Driver — Integrated (high-side + low-side)
Level Shifter — Integrated high-voltage level shifter
Bootstrap Diode — Integrated ultra-fast low-resistance
Source Drive Current — +0.29 A
Sink Drive Current — -0.7 A
Turn-On/Turn-Off — Application-configurable (external Rg)
Application Category — SMPS, PFC, motor drive, Class-D audio

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청