IGI60L1111B1MXUMA1 vs IGI60L1414B1MXUMA1 Сравнение
Подробное сравнение бок о бок IGI60L1111B1MXUMA1 от Infineon и IGI60L1414B1MXUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IGI60L1111B1MXUMA1 | IGI60L1414B1MXUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | Transistors |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $5,55 | $4,55 |
| Technology | GaN (Gallium Nitride), enhancement-mode | GaN (Gallium Nitride), enhancement-mode |
| Configuration | Half-Bridge (integrated gate driver + bootstrap diode) | Half-bridge (high-side + low-side switch) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| On-Resistance (RDS(on), typ) | 110 mΩ | — |
| Выходной ток (макс.) | 7.4 A | — |
| Gate-Drive Supply (VCC) | 10 V to 20 V | — |
| Корпус | PG-TFLGA-27-2 (6 x 8 mm) | PG-TFLGA-27-2 |
| Integrated Bootstrap Diode | Yes | — |
| PWM Input Logic Level | 3.3 V / 5 V compatible | — |
| CoolGaN Generation | G5 | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Уровень MSL | [DATA_NEEDED: MSL rating] | — |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolGaN™ (IGI family) |
| Continuous Drain Current (ID) | — | 6.0 A |
| On-Resistance (RDS(on)) | — | 140 mΩ (per switch) |
| Gate Driver | — | Integrated (high-side + low-side) |
| Level Shifter | — | Integrated high-voltage level shifter |
| Bootstrap Diode | — | Integrated ultra-fast low-resistance |
| Source Drive Current | — | +0.29 A |
| Sink Drive Current | — | -0.7 A |
| Turn-On/Turn-Off | — | Application-configurable (external Rg) |
| Application Category | — | SMPS, PFC, motor drive, Class-D audio |