IGI60L5050B1MXUMA1 vs IGI65D1414A3MSXUMA1 Vergleich
Detaillierter Direktvergleich von IGI60L5050B1MXUMA1 von Infineon und IGI65D1414A3MSXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IGI60L5050B1MXUMA1 - 600V GaN Half-Bridge with Integrated Driver | Infineon
IGI60L5050B1MXUMA1 ✓ AktivInfineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IGI60L5050B1MXUMA1 | IGI65D1414A3MSXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,85 | $4,95 |
| Technology | GaN (Gallium Nitride), enhancement-mode | Enhancement-mode GaN HEMT (eMode) |
| Configuration | Half-bridge (high-side + low-side switch with integrated gate driver) | Half-Bridge (2 FETs in QFN-32, high-side + low-side) |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-State Resistance (RDS(on)) per switch | 500 mΩ (0.5 Ω) | — |
| Number of GaN Switches | 2 | — |
| Gate Driver Source Current | +0.29 A | — |
| Gate Driver Sink Current | -0.7 A | — |
| Integrated Bootstrap Diode | Yes (ultra-fast, low-resistance) | — |
| Turn-on / Turn-off dV/dt | Application-configurable (via gate resistor) | — |
| Gehäuse | PG-TFLGA-27-2 (TFLGA-27), 6x8 mm | PG-TIQFN-32-1 (QFN-32, 6x8 mm) |
| Pin-Anzahl | 27 | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40 °C to +125 °C (junction 150 °C) | — |
| RoHS-Status | Compliant | — |
| Reach Status | Compliant | — |
| Lead-Free | Yes | — |
| Target Applications | Totem-pole PFC, LLC converters, HF SMPS, BLDC drives | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolGaN™ HEMT |
| Drain-Source Voltage (V_DS, max) | — | 650 V |
| On-Resistance (R_DS(on), typ) | — | 140 mΩ per FET |
| Continuous Drain Current | — | 13.7 A (per Newark listing) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Total Gate Charge (Q_G, typ) | — | [DATA_NEEDED: Q_G total] |
| Output Charge (Q_OSS) | — | [DATA_NEEDED: Q_OSS value] |
| Reverse Recovery Charge (Q_RR) | — | 0 nC (intrinsic to GaN HEMT, no body diode recovery) |
| Thermal Resistance (R_thJA) | — | [DATA_NEEDED: R_thJA value] |
| Typical Applications | — | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| RoHS Compliance | — | Compliant |