IGI60L5050B1MXUMA1 vs IGI65D1414A3MSXUMA1 비교

다음의 상세 나란히 비교: IGI60L5050B1MXUMA1 제조: Infineon 및 IGI65D1414A3MSXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IGI60L5050B1MXUMA1 IGI65D1414A3MSXUMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $3.85 $4.95
Technology GaN (Gallium Nitride), enhancement-mode Enhancement-mode GaN HEMT (eMode)
Configuration Half-bridge (high-side + low-side switch with integrated gate driver) Half-Bridge (2 FETs in QFN-32, high-side + low-side)
Drain-Source Voltage (VDS) 600 V —
On-State Resistance (RDS(on)) per switch 500 mΩ (0.5 Ω) —
Number of GaN Switches 2 —
Gate Driver Source Current +0.29 A —
Gate Driver Sink Current -0.7 A —
Integrated Bootstrap Diode Yes (ultra-fast, low-resistance) —
Turn-on / Turn-off dV/dt Application-configurable (via gate resistor) —
패키지 PG-TFLGA-27-2 (TFLGA-27), 6x8 mm PG-TIQFN-32-1 (QFN-32, 6x8 mm)
핀 수 27 —
실장 유형 Surface Mount Surface Mount
동작 온도 -40 °C to +125 °C (junction 150 °C) —
RoHS 상태 Compliant —
Reach Status Compliant —
Lead-Free Yes —
Target Applications Totem-pole PFC, LLC converters, HF SMPS, BLDC drives —
Manufacturer — Infineon Technologies
Product Family — CoolGaN™ HEMT
Drain-Source Voltage (V_DS, max) — 650 V
On-Resistance (R_DS(on), typ) — 140 mΩ per FET
Continuous Drain Current — 13.7 A (per Newark listing)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) value]
동작 온도 범위 — [DATA_NEEDED: operating temperature range]
Total Gate Charge (Q_G, typ) — [DATA_NEEDED: Q_G total]
Output Charge (Q_OSS) — [DATA_NEEDED: Q_OSS value]
Reverse Recovery Charge (Q_RR) — 0 nC (intrinsic to GaN HEMT, no body diode recovery)
Thermal Resistance (R_thJA) — [DATA_NEEDED: R_thJA value]
Typical Applications — AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting
MSL 레벨 — [DATA_NEEDED: MSL level]
RoHS Compliance — Compliant

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