IGI60L5050B1MXUMA1 vs IGI65D1414A3MSXUMA1 Сравнение
Подробное сравнение бок о бок IGI60L5050B1MXUMA1 от Infineon и IGI65D1414A3MSXUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IGI60L5050B1MXUMA1 - 600V GaN Half-Bridge with Integrated Driver | Infineon
IGI60L5050B1MXUMA1 ✓ АктивенInfineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ АктивенСравнение характеристик
| Параметр | IGI60L5050B1MXUMA1 | IGI65D1414A3MSXUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $3,85 | $4,95 |
| Technology | GaN (Gallium Nitride), enhancement-mode | Enhancement-mode GaN HEMT (eMode) |
| Configuration | Half-bridge (high-side + low-side switch with integrated gate driver) | Half-Bridge (2 FETs in QFN-32, high-side + low-side) |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-State Resistance (RDS(on)) per switch | 500 mΩ (0.5 Ω) | — |
| Number of GaN Switches | 2 | — |
| Gate Driver Source Current | +0.29 A | — |
| Gate Driver Sink Current | -0.7 A | — |
| Integrated Bootstrap Diode | Yes (ultra-fast, low-resistance) | — |
| Turn-on / Turn-off dV/dt | Application-configurable (via gate resistor) | — |
| Корпус | PG-TFLGA-27-2 (TFLGA-27), 6x8 mm | PG-TIQFN-32-1 (QFN-32, 6x8 mm) |
| Число выводов | 27 | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Рабочая температура | -40 °C to +125 °C (junction 150 °C) | — |
| Статус RoHS | Compliant | — |
| Reach Status | Compliant | — |
| Lead-Free | Yes | — |
| Target Applications | Totem-pole PFC, LLC converters, HF SMPS, BLDC drives | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolGaN™ HEMT |
| Drain-Source Voltage (V_DS, max) | — | 650 V |
| On-Resistance (R_DS(on), typ) | — | 140 mΩ per FET |
| Continuous Drain Current | — | 13.7 A (per Newark listing) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Диапазон рабочих температур | — | [DATA_NEEDED: operating temperature range] |
| Total Gate Charge (Q_G, typ) | — | [DATA_NEEDED: Q_G total] |
| Output Charge (Q_OSS) | — | [DATA_NEEDED: Q_OSS value] |
| Reverse Recovery Charge (Q_RR) | — | 0 nC (intrinsic to GaN HEMT, no body diode recovery) |
| Thermal Resistance (R_thJA) | — | [DATA_NEEDED: R_thJA value] |
| Typical Applications | — | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting |
| Уровень MSL | — | [DATA_NEEDED: MSL level] |
| RoHS Compliance | — | Compliant |