IGI60L5050B1MXUMA1 vs IGI65D1414A3MSXUMA1 比較

詳細な並列比較: IGI60L5050B1MXUMA1 メーカー: Infineon および IGI65D1414A3MSXUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

仕様比較

パラメータ IGI60L5050B1MXUMA1 IGI65D1414A3MSXUMA1
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $3.85 $4.95
Technology GaN (Gallium Nitride), enhancement-mode Enhancement-mode GaN HEMT (eMode)
Configuration Half-bridge (high-side + low-side switch with integrated gate driver) Half-Bridge (2 FETs in QFN-32, high-side + low-side)
Drain-Source Voltage (VDS) 600 V —
On-State Resistance (RDS(on)) per switch 500 mΩ (0.5 Ω) —
Number of GaN Switches 2 —
Gate Driver Source Current +0.29 A —
Gate Driver Sink Current -0.7 A —
Integrated Bootstrap Diode Yes (ultra-fast, low-resistance) —
Turn-on / Turn-off dV/dt Application-configurable (via gate resistor) —
パッケージ PG-TFLGA-27-2 (TFLGA-27), 6x8 mm PG-TIQFN-32-1 (QFN-32, 6x8 mm)
ピン数 27 —
実装タイプ Surface Mount Surface Mount
動作温度 -40 °C to +125 °C (junction 150 °C) —
RoHS ステータス Compliant —
Reach Status Compliant —
Lead-Free Yes —
Target Applications Totem-pole PFC, LLC converters, HF SMPS, BLDC drives —
Manufacturer — Infineon Technologies
Product Family — CoolGaN™ HEMT
Drain-Source Voltage (V_DS, max) — 650 V
On-Resistance (R_DS(on), typ) — 140 mΩ per FET
Continuous Drain Current — 13.7 A (per Newark listing)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) value]
動作温度範囲 — [DATA_NEEDED: operating temperature range]
Total Gate Charge (Q_G, typ) — [DATA_NEEDED: Q_G total]
Output Charge (Q_OSS) — [DATA_NEEDED: Q_OSS value]
Reverse Recovery Charge (Q_RR) — 0 nC (intrinsic to GaN HEMT, no body diode recovery)
Thermal Resistance (R_thJA) — [DATA_NEEDED: R_thJA value]
Typical Applications — AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting
MSLレベル — [DATA_NEEDED: MSL level]
RoHS Compliance — Compliant

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