IGI60L5050B1MXUMA1 vs IGI65D1414A3MSXUMA1 Comparaison
Comparaison détaillée côte à côte de IGI60L5050B1MXUMA1 par Infineon et IGI65D1414A3MSXUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IGI60L5050B1MXUMA1 - 600V GaN Half-Bridge with Integrated Driver | Infineon
IGI60L5050B1MXUMA1 ✓ ActifInfineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ ActifComparaison des spécifications
| Paramètre | IGI60L5050B1MXUMA1 | IGI65D1414A3MSXUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,85 | $4,95 |
| Technology | GaN (Gallium Nitride), enhancement-mode | Enhancement-mode GaN HEMT (eMode) |
| Configuration | Half-bridge (high-side + low-side switch with integrated gate driver) | Half-Bridge (2 FETs in QFN-32, high-side + low-side) |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-State Resistance (RDS(on)) per switch | 500 mΩ (0.5 Ω) | — |
| Number of GaN Switches | 2 | — |
| Gate Driver Source Current | +0.29 A | — |
| Gate Driver Sink Current | -0.7 A | — |
| Integrated Bootstrap Diode | Yes (ultra-fast, low-resistance) | — |
| Turn-on / Turn-off dV/dt | Application-configurable (via gate resistor) | — |
| Boîtier | PG-TFLGA-27-2 (TFLGA-27), 6x8 mm | PG-TIQFN-32-1 (QFN-32, 6x8 mm) |
| Nombre de broches | 27 | — |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | -40 °C to +125 °C (junction 150 °C) | — |
| Statut RoHS | Compliant | — |
| Reach Status | Compliant | — |
| Lead-Free | Yes | — |
| Target Applications | Totem-pole PFC, LLC converters, HF SMPS, BLDC drives | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolGaN™ HEMT |
| Drain-Source Voltage (V_DS, max) | — | 650 V |
| On-Resistance (R_DS(on), typ) | — | 140 mΩ per FET |
| Continuous Drain Current | — | 13.7 A (per Newark listing) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Plage de température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |
| Total Gate Charge (Q_G, typ) | — | [DATA_NEEDED: Q_G total] |
| Output Charge (Q_OSS) | — | [DATA_NEEDED: Q_OSS value] |
| Reverse Recovery Charge (Q_RR) | — | 0 nC (intrinsic to GaN HEMT, no body diode recovery) |
| Thermal Resistance (R_thJA) | — | [DATA_NEEDED: R_thJA value] |
| Typical Applications | — | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting |
| Niveau MSL | — | [DATA_NEEDED: MSL level] |
| RoHS Compliance | — | Compliant |