IMW120R045M1H vs IMZ120R045M1H Vergleich

Detaillierter Direktvergleich von IMW120R045M1H von Infineon und IMZ120R045M1H von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IMW120R045M1H IMZ120R045M1H
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $17,95
Technology CoolSiC SiC Trench MOSFET CoolSiC™ 1200 V SiC Trench MOSFET
Drain-Source Voltage (VDS) 1200 V —
On-Resistance (RDS(on)) 45 mOhm at Tj = 25C —
Continuous Drain Current (ID) 52 A at Tc = 25C —
Verlustleistung (Ptot) 228 W at Tc = 25C —
Gate Threshold Voltage (VGS(th)) 4.5 V —
Recommended Turn-On Gate Voltage 15 V —
Turn-Off Gate Voltage 0 V —
Configuration Single N-channel with built-in body diode —
Montageart Through Hole Through-hole
Gehäuse PG-TO247-3-41 (TO-247-3) TO-247-4 (PG-TO247-4-1)
Qualification Industrial grade JEDEC 47/20/22 (industrial)
Gate Drive Compatibility IGBT-compatible gate drive —
dv/dt Control Fully controllable via gate resistor —
Body Diode Robust, suitable for synchronous rectification Commutation-robust, synchronous-rectification ready
Turn-Off Switching Losses Temperature independent —
Manufacturer Recommended Operating Margin Do not exceed 80% of maximum ratings for optimum lifetime —
Drain-Source Voltage (VDS max) — 1200 V
On-Resistance RDS(on) at 25°C — 45 mΩ
Continuous Drain Current (ID at Tc=25°C) — 52 A
Total Power Dissipation at Tc=25°C — 228 W
Gate Threshold Voltage VGS(th) — 4.5 V (typical)
Turn-off Gate Voltage — 0 V capable
Betriebs-Sperrschichttemperatur — -55 °C to +175 °C
Polarity — N-Channel
Driver Source Pin (Kelvin) — Yes - dedicated sense/source pin
RoHS-Status — Compliant

Datenblätter & Ressourcen

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