IMW120R045M1H vs IMZ120R045M1H 比較
詳細な並列比較: IMW120R045M1H メーカー: Infineon および IMZ120R045M1H メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IMW120R045M1H | IMZ120R045M1H |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.00 | $17.95 |
| Technology | CoolSiC SiC Trench MOSFET | CoolSiC™ 1200 V SiC Trench MOSFET |
| Drain-Source Voltage (VDS) | 1200 V | — |
| On-Resistance (RDS(on)) | 45 mOhm at Tj = 25C | — |
| Continuous Drain Current (ID) | 52 A at Tc = 25C | — |
| 消費電力（Ptot） | 228 W at Tc = 25C | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | — |
| Recommended Turn-On Gate Voltage | 15 V | — |
| Turn-Off Gate Voltage | 0 V | — |
| Configuration | Single N-channel with built-in body diode | — |
| 実装タイプ | Through Hole | Through-hole |
| パッケージ | PG-TO247-3-41 (TO-247-3) | TO-247-4 (PG-TO247-4-1) |
| Qualification | Industrial grade | JEDEC 47/20/22 (industrial) |
| Gate Drive Compatibility | IGBT-compatible gate drive | — |
| dv/dt Control | Fully controllable via gate resistor | — |
| Body Diode | Robust, suitable for synchronous rectification | Commutation-robust, synchronous-rectification ready |
| Turn-Off Switching Losses | Temperature independent | — |
| Manufacturer Recommended Operating Margin | Do not exceed 80% of maximum ratings for optimum lifetime | — |
| Drain-Source Voltage (VDS max) | — | 1200 V |
| On-Resistance RDS(on) at 25°C | — | 45 mΩ |
| Continuous Drain Current (ID at Tc=25°C) | — | 52 A |
| Total Power Dissipation at Tc=25°C | — | 228 W |
| Gate Threshold Voltage VGS(th) | — | 4.5 V (typical) |
| Turn-off Gate Voltage | — | 0 V capable |
| 動作接合温度 | — | -55 °C to +175 °C |
| Polarity | — | N-Channel |
| Driver Source Pin (Kelvin) | — | Yes - dedicated sense/source pin |
| RoHS ステータス | — | Compliant |