IMW120R045M1H vs IMZ120R045M1H 对比
详细并排对比 IMW120R045M1H 出自 Infineon 和 IMZ120R045M1H 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IMW120R045M1H | IMZ120R045M1H |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $17.95 |
| Technology | CoolSiC SiC Trench MOSFET | CoolSiC™ 1200 V SiC Trench MOSFET |
| Drain-Source Voltage (VDS) | 1200 V | — |
| On-Resistance (RDS(on)) | 45 mOhm at Tj = 25C | — |
| Continuous Drain Current (ID) | 52 A at Tc = 25C | — |
| 功耗（Ptot） | 228 W at Tc = 25C | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | — |
| Recommended Turn-On Gate Voltage | 15 V | — |
| Turn-Off Gate Voltage | 0 V | — |
| Configuration | Single N-channel with built-in body diode | — |
| 安装类型 | Through Hole | Through-hole |
| 封装 | PG-TO247-3-41 (TO-247-3) | TO-247-4 (PG-TO247-4-1) |
| Qualification | Industrial grade | JEDEC 47/20/22 (industrial) |
| Gate Drive Compatibility | IGBT-compatible gate drive | — |
| dv/dt Control | Fully controllable via gate resistor | — |
| Body Diode | Robust, suitable for synchronous rectification | Commutation-robust, synchronous-rectification ready |
| Turn-Off Switching Losses | Temperature independent | — |
| Manufacturer Recommended Operating Margin | Do not exceed 80% of maximum ratings for optimum lifetime | — |
| Drain-Source Voltage (VDS max) | — | 1200 V |
| On-Resistance RDS(on) at 25°C | — | 45 mΩ |
| Continuous Drain Current (ID at Tc=25°C) | — | 52 A |
| Total Power Dissipation at Tc=25°C | — | 228 W |
| Gate Threshold Voltage VGS(th) | — | 4.5 V (typical) |
| Turn-off Gate Voltage | — | 0 V capable |
| 工作结温 | — | -55 °C to +175 °C |
| Polarity | — | N-Channel |
| Driver Source Pin (Kelvin) | — | Yes - dedicated sense/source pin |
| RoHS 状态 | — | Compliant |